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TF2301 Dataheets PDF



Part Number TF2301
Manufacturers Tuofeng Semiconductor
Logo Tuofeng Semiconductor
Description P-Channel MOSFET
Datasheet TF2301 DatasheetTF2301 Datasheet (PDF)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2301 P-Channel TF2301MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.120 @ VGS = - 4.5 V - 20 0.190 @ VGS = - 2.5 V ID (A) - 2.8 - 1.8 (SOT-23-3L) (SOT-23) G1 S2 3D Top View SI2301(A1sHB)* ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS - 20 "8 Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conductio.

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2301 P-Channel TF2301MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.120 @ VGS = - 4.5 V - 20 0.190 @ VGS = - 2.5 V ID (A) - 2.8 - 1.8 (SOT-23-3L) (SOT-23) G1 S2 3D Top View SI2301(A1sHB)* ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS - 20 "8 Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b TA= 25_C ID IDM IS - 2.8 - 10 - 1.6 Power Dissipationb TA= 25_C PD 1.25 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. Symbol RthJA Limit 100 166 Unit V A W _C Unit _C/W 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2301 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switchingc Turn-On Time Turn-Off Time Symbol Test Conditions V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = - 250 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 16 V, VGS = 0 V VDS = - 16 V, VGS = 0 V, TJ = 55_C VDS v - 5 V, VGS = - 4.5 V VDS v - 5 V, VGS = - 2.5 V VGS = - 4.5 V, ID = - 2.8 A VGS = - 2.5 V, ID = - 1.8 A VDS = - 5 V, ID = - 2.3 A IS = - 1.6 A, VGS = 0 V Qg Qgs Qgd Ciss Coss Crss VDS = - 6 V, VGS = - 4.5 V ID ^ - 2.38 A VDS = - 6 V, VGS = 0, f = 1 MHz td(on) tr td(off) tf ID ^VD-D1=.0-A6, VVG, RENL = = 6W - 4.5 V RG = 6 W Limits Min Typ Max Unit - 20 - 0.5 -6 -3 -1.0 "100 -50 0.105 0.145 6.5 - 0.80 0.120 0.190 - 1.2 V nA nA A W S V 5.8 0.85 1.70 415 223 87 10 nC pF 13.0 36.0 42 34 25 60 70 60 ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. 2 Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2301 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10 Output Characteristics VGS = 5, 4.5, 4, 3.5, 3 V 8 2.5 V 10 8 66 4 2V 4 Transfer Characteristics TC = - 55_C 25_C 125_C I D - Drain Current (A) I D - Drain Current (A) rDS(on)- On-Resistance ( W ) 2 0, 0.5, 1 V 1.5 V 0 012345 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 0.6 0.5 0.4 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V 0.1 0.0 0 2468 ID - Drain Current (A) Gate Charge 5 VDS = 6 V ID = 2.8 A 4 10 3 2 1 0 02468 Qg - Total Gate Charge (nC) rDS(on)- On-Resistance ( W ) (Normalized) C - Capacitance (pF) 2 0 0.0 1000 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Capacitance 3.0 800 600 Ciss 400 Coss Crss 200 0 0369 VDS - Drain-to-Source Voltage (V) 12 On-Resistance vs. Junction Temperature 1.8 VGS = 4.5 V 1.6 ID = 2.8 A 1.4 1.2 1.0 0.8 0.6 - 50 0 50 100 TJ - Junction Temperature (_C) 150 V GS - Gate-to-Source Voltage (V) 3 Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2301 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 On-Resistance vs. Gate-to-Source Voltage 0.6 0.5 rDS(on)- On-Resistance ( W ) I S - Source Current (A) TJ = 150_C TJ = 25_C 0.4 0.3 ID = 2.8 A 0.2 0.1 VGS(th)Variance (V) 1 0.2 0.4 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-to-Drain Voltage (V) Threshold Voltage 1.6 0.0 0 14 246 VGS - Gate-to-Source Voltage (V) Single Pulse Power 0.3 12 0.2 ID = 250 mA 0.1 0.0 - 0.1 Power (W) 10 8 6 STinCg=le2P5u_lCse 4 2 - 0.2 - 50 0 50 100 TJ - Temperature (_C) 150 0 0.01 0.10 1.00 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 8 10.00 0.2 0.1 0.1 0.05 0.02 0.01 10 - 4 Single Pulse 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 30 Normalized Effective Transient Thermal Impedance 4 .


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