Document
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TF2301
P-Channel TF2301MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.120 @ VGS = - 4.5 V - 20 0.190 @ VGS = - 2.5 V
ID (A)
- 2.8 - 1.8
(SOT-23-3L) (SOT-23)
G1 S2
3D
Top View SI2301(A1sHB)*
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS VGS
- 20 "8
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b
TA= 25_C
ID
IDM IS
- 2.8
- 10 - 1.6
Power Dissipationb
TA= 25_C
PD
1.25
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc
Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board.
Symbol
RthJA
Limit
100 166
Unit
V A W _C
Unit
_C/W
1
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TF2301
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
Switchingc
Turn-On Time
Turn-Off Time
Symbol
Test Conditions
V(BR)DSS VGS(th)
IGSS IDSS
ID(on)
rDS(on) gfs VSD
VGS = 0 V, ID = - 250 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 16 V, VGS = 0 V VDS = - 16 V, VGS = 0 V, TJ = 55_C VDS v - 5 V, VGS = - 4.5 V VDS v - 5 V, VGS = - 2.5 V VGS = - 4.5 V, ID = - 2.8 A VGS = - 2.5 V, ID = - 1.8 A VDS = - 5 V, ID = - 2.3 A
IS = - 1.6 A, VGS = 0 V
Qg Qgs Qgd Ciss Coss Crss
VDS = - 6 V, VGS = - 4.5 V ID ^ - 2.38 A
VDS = - 6 V, VGS = 0, f = 1 MHz
td(on) tr
td(off) tf
ID
^VD-D1=.0-A6,
VVG, RENL
= =
6W - 4.5
V
RG = 6 W
Limits Min Typ Max
Unit
- 20 - 0.5
-6 -3
-1.0 "100
-50
0.105 0.145
6.5 - 0.80
0.120 0.190
- 1.2
V nA nA
A
W S V
5.8 0.85 1.70 415 223 87
10
nC pF
13.0 36.0 42 34
25 60 70 60
ns
Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature.
2
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TF2301
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10 Output Characteristics VGS = 5, 4.5, 4, 3.5, 3 V
8 2.5 V
10 8
66 4 2V 4
Transfer Characteristics
TC = - 55_C
25_C
125_C
I D - Drain Current (A)
I D - Drain Current (A)
rDS(on)- On-Resistance ( W )
2
0, 0.5, 1 V
1.5 V
0 012345
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current 0.6
0.5
0.4
0.3 VGS = 2.5 V
0.2 VGS = 4.5 V
0.1
0.0 0
2468 ID - Drain Current (A)
Gate Charge 5
VDS = 6 V ID = 2.8 A
4
10
3
2
1
0 02468
Qg - Total Gate Charge (nC)
rDS(on)- On-Resistance ( W ) (Normalized)
C - Capacitance (pF)
2
0 0.0
1000
0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V)
Capacitance
3.0
800
600
Ciss 400
Coss Crss 200
0 0369
VDS - Drain-to-Source Voltage (V)
12
On-Resistance vs. Junction Temperature 1.8
VGS = 4.5 V 1.6 ID = 2.8 A
1.4
1.2
1.0
0.8
0.6 - 50
0 50 100 TJ - Junction Temperature (_C)
150
V GS - Gate-to-Source Voltage (V)
3
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TF2301
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage 10
On-Resistance vs. Gate-to-Source Voltage 0.6
0.5
rDS(on)- On-Resistance ( W )
I S - Source Current (A)
TJ = 150_C
TJ = 25_C
0.4 0.3 ID = 2.8 A 0.2
0.1
VGS(th)Variance (V)
1 0.2
0.4
0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-to-Drain Voltage (V)
Threshold Voltage
1.6
0.0 0
14
246 VGS - Gate-to-Source Voltage (V)
Single Pulse Power
0.3 12
0.2 ID = 250 mA 0.1 0.0 - 0.1
Power (W)
10
8 6 STinCg=le2P5u_lCse
4
2
- 0.2 - 50
0 50 100 TJ - Temperature (_C)
150
0 0.01
0.10
1.00 Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient 2
1 Duty Cycle = 0.5
8 10.00
0.2
0.1 0.1
0.05
0.02
0.01 10 - 4
Single Pulse 10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1
10 30
Normalized Effective Transient Thermal Impedance
4
.