TF2306

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2306 N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 0.057 @ VGS = 10 V 0.094 @ VGS = 4.5 V - ID (A) 3.5 2.8 FEATURES D Power MOSFET D 100% Rg Tested (SOT-23) G1 S2 3D Top View TF2306 *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS 30 "20 Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 25_C ID IDM IS PD TJ, Tstg 3.5 16 1.25 1.25 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board. b. t v 5 sec. t v 5 sec Steady State Symbol RthJA Typical 130 Maximum 100 Unit _C/W 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2306 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Forward Transconductancea Diode Forward Voltagea Dynamicb gfs VSD Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Input C...