TF2308

Shen zhen TuoFeng Semiconductor Technology co., LTD TF2308 N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 60 0.16 @ VGS = 10 V 0.22 @ VGS = 4.5 V ID (A) 2.0 1.7 FEATURES D 100% Rg Tested (SOT-23) G1 S2 3D Top View TF2308 (A8)* ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS 60 "20 Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 25_C ID IDM IS PD TJ, Tstg 2.0 10 1.0 1.25 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Ambientc Notes a. Surface Mounted on FR4 Board, t = v5 sec. b. Pulse width limited by maximum junction temperature. c. Surface Mounted on FR4 Board Symbol RthJA Maximum 100 166 Unit V A W _C Unit _C/W 1 Shen zhen TuoFeng Semiconductor Technology co., LTD TF2308 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamic V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55_C...