TF2328

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2328 N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) 0.300 @ VGS = 10 V ID (A) 1.5 (SOT-23) G1 S2 3D Top View TF2328(D82TF) *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage Gate-Source Voltage VDS 100 VGS "20 Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Avalanche Currentb Single Avalanche Energy Continuous Source Current (Diode Conduction)a TA= 25_C L = 0.1 mH ID IDM IAS EAS IS 1.5 1.15 6 6 1.8 0.6 Power Dissipationa Operating Junction and Storage Temperature Range TA= 25_C PD TJ, Tstg 1.25 0.73 –55 to 150 Unit V A mJ A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 80 130 45 Maximum 100 170 55 Unit _C/W 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Symbol V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching Turn-On Delay Time Rise Time Tur...