2015

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2015 Single P-Channel, -20V, -2.4A, Power MOSFET VDS (V) -20 Rds(on) (ȍ) 0.081@ VGS=4.5V 0.103@ VGS=2.5V Descriptions The 2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product 2015 is Pb-free and Halogen-free. Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging SOT-23 D 3 12 GS Pin configuration (Top view) Shenzhen Tuofeng Semiconductor Technology Co., Ltd Absolute Maximum ratings 2015 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissipation b Pulsed Drain Current c Operating Junction Temperature Lead Temperature Storage Temperature Range TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C Symbol VDS VGS ID PD ID PD IDM TJ TL Tstg 10 S Steady State -20 f8 -2.4 -2.2 -1.9 -1.7 0.9 0.8 0.5 0.5 -2.2 -2.0 -1.7 -1.6 0.7 0.6 0.5 0.4 -10 150 260 -55 to 150 Unit V A W A W A °C °C °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a t ” 10 ...