Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2015
Single P-Channel, -20V, -2.4A, Power MOSFET
VDS (V) -20
Rds(o...
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2015
Single P-Channel, -20V, -2.4A, Power MOSFET
VDS (V) -20
Rds(on) (ȍ) 0.081@ VGS=4.5V 0.103@ VGS=2.5V
Descriptions
The 2015 is P-Channel enhancement MOS Field Effect
Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product 2015 is Pb-free and Halogen-free.
Features
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23
Applications
z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging
SOT-23
D 3
12 GS
Pin configuration (Top view)
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Absolute Maximum ratings
2015
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b Pulsed Drain Current c Operating Junction Temperature Lead Temperature Storage Temperature Range
TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C
Symbol VDS VGS ID
PD
ID
PD IDM TJ TL Tstg
10 S Steady State
-20 f8 -2.4 -2.2 -1.9 -1.7 0.9 0.8 0.5 0.5 -2.2 -2.0 -1.7 -1.6 0.7 0.6 0.5 0.4 -10 150 260 -55 to 150
Unit V
A
W
A
W A °C °C °C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a t 10 ...