Document
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2015
Single P-Channel, -20V, -2.4A, Power MOSFET
VDS (V) -20
Rds(on) (ȍ) 0.081@ VGS=4.5V 0.103@ VGS=2.5V
Descriptions
The 2015 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product 2015 is Pb-free and Halogen-free.
Features
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23
Applications
z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging
SOT-23
D 3
12 GS
Pin configuration (Top view)
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Absolute Maximum ratings
2015
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b Pulsed Drain Current c Operating Junction Temperature Lead Temperature Storage Temperature Range
TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C
Symbol VDS VGS ID
PD
ID
PD IDM TJ TL Tstg
10 S Steady State
-20 f8 -2.4 -2.2 -1.9 -1.7 0.9 0.8 0.5 0.5 -2.2 -2.0 -1.7 -1.6 0.7 0.6 0.5 0.4 -10 150 260 -55 to 150
Unit V
A
W
A
W A °C °C °C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a t 10 s Steady State
Junction-to-Ambient Thermal Resistance b t 10 s Steady State
Junction-to-Case Thermal Resistance
Steady State
Symbol RșJA
RșJA RșJC
Typical
105 120 130 145 60
Maximum
135 155 160 190 75
Unit °C/W
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width<380μs, Duty Cycle<2% d Maximum junction temperature TJ=150°C.
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Electronics Characteristics (Ta=25oC, unless otherwise noted)
2015
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage
Symbol
BVDSS IDSS IGSS
VGS(TH)
Drain-to-source On-resistance b, c
RDS(on)
CAPACITANCES, CHARGES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time BODY DIODE CHARACTERISTICS Forward Voltage
CISS COSS CRSS QG(TOT) QG(TH) QGS QGD
td(ON) tr td(OFF) tf
VSD
Test Conditions
VGS = 0 V, ID = -250uA VDS = -16V, VGS = 0V VDS = 0 V, VGS = f8V
VGS = VDS, ID = -250uA VGS = -4.5V, ID = -2.7A VGS = -2.5V, ID = -2.2A
VGS = 0 V, f = 1.0 MHz, VDS = -10 V
VGS = -4.5 V, VDS = -10 V, ID = -2.7A
VGS = -4.5 V, VDS = -10 V, ID=-1.2A, RG=6
VGS = 0 V, IS = -0.9A
Min Typ Max Unit
-20 V -1 uA
f100 nA
-0.40
-0.62 81 103
-0.81 110 150
V m
534
62 pF
54
7.3
0.5 1.25
nC
1.15
8.0 6.4 41.0 7.0
ns
-0.74 -1.5 V
-I -Drain to Source Current(A) DS
-I -Drain Source Current(A) DS
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Typical Characteristics (Ta=25oC, unless otherwise noted)
10
V =-4.5V GS
V =-4V GS
8 V =-3V GS
5 V =-5V
DS
4
6
V =-2.5V
3
GS
2015
T=-50oC
T=25oC T=125oC
42
V =-1.5V GS
21
0 0.0 0.5 1.0 1.5 2.0
-V -Drain to Source Voltage(V) DS
Output characteristics
0 0.0 0.4 0.8 1.2 1.6 2.0
-V -Gate to Source Voltage(V) GS
Transfer characteristics
-R -On Resistance(m:) DS(ON)
160
140
V =-1.8V GS
120
100
V =-2.5V GS
80 V =-4.5V GS
60
40 12345
-I -Drain to Source Current(A) DS
On-Resistance vs. Drain current
140
120
V =-4.5V,I =-2.7A GS D
100
80
60
40
20 -50
0 50 100
Temperature(oC)
150
On-Resistance vs. Junction temperature
RDS(ON)-Reistance(m:)
-V -Gate Threshold Voltage(V) GS(th)
280
240
I =-2.7A
D
200
160
120
80
40 1.0
1.5 2.0 2.5 3.0 3.5 4.0
-V -Gate to Source Voltage(V) GS
4.5
On-Resistance vs. Gate-to-Source voltage
1.0
I =-250uA
D
0.8
0.6
0.4
0.2 -50
0 50 100
Temperature(oC)
150
Threshold voltage vs. Temperature
Resistance(m:)
R -On DS(ON)
C-Capacitance(pF)
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2015
800 700 600 500 400 300 200 100
0 0
F=1MHZ
Ciss
Coss
Crss
2468
-V -Drain to Source Voltage(V) DS
10
Capacitance
10
8
6
-I -Source to Drain Current(A) SD
5
T=125oC
4
3
T=25oC
2
1
0 0.0 0.3 0.6 0.9 1.2 1.5
-V -Source to Drain Voltage(V) SD
Body diode forward voltage
10 Limited by RDS(on)
1
100 μs
1 ms 10 ms
- I D - Drain Current (A)
4
2 TA = 25 °C
0 0.01
0.1
1 10 Time (s)
100 1000
Single pulse power
0.1
TA = 25 °C Single Pulse
100 ms
1s 10 s DC
0.01 0.1
BVDSS Limited
1 10 -V DS - Drain-to-Source Voltage (V)
100
Safe operating power
Power (W)
-V -Gate to Source Voltage GS
4.5
I =-2.7A
4.0 D 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0
0 2 4 6 8 10
Qg (nc) .