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Signal MOSFET. 2021 Datasheet

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Signal MOSFET. 2021 Datasheet
















2021 MOSFET. Datasheet pdf. Equivalent













Part

2021

Description

N-Channel Small Signal MOSFET



Feature


Shenzhen Tuofeng Semiconductor Technolog y Co., Ltd 2021 N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) 20 Rds(o n) (ȍ) 0.310@ VGS=4.5V 0.360@ VGS=2.5V 0.460@ VGS=1.8V Descriptions The 2021 is N-Channel enhancement MOS Field Eff ect Transistor. Uses advanced trench te chnology and design to provide excellen t RDS (ON) with low gate charge. This d evice is suitable f.
Manufacture

Tuofeng Semiconductor

Datasheet
Download 2021 Datasheet


Tuofeng Semiconductor 2021

2021; or use in DC-DC conversion, load switch and level shift. Standard Product 2021 is Pb-free. Features z Trench Technolo gy z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT- 323 Applications z DC-DC converter ci rcuit z Small Signal Switch z Load Swit ch z Level Shift z SOT-323 D 3 12 GS P in configuration (.


Tuofeng Semiconductor 2021

Top view) Shenzhen Tuofeng Semiconducto r Technology Co., Ltd 2021 Absolute Max imum ratings Parameter Drain-Source Vo ltage Gate-Source Voltage Continuous Dr ain Current TA =25°C Symbol VDS VGS ID 10 S Steady State 20 ±6 0.58 0.5 5 Unit V A Maximum Power Dissipation Pulsed Drain Current c Operating Juncti on Temperature Lead Temperature Storage Temperature Range .


Tuofeng Semiconductor 2021

TA =25°C PD IDM TJ TL Tstg 0.37 0.31 1.4 150 260 -55 to 150 W A °C °C °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistanc e a t ” 10 s Steady State Junction-to -Ambient Thermal Resistance b t ” 10 s Steady State Junction-to-Case Thermal Resistance Steady State Symbol RșJA RșJA RșJC Typical 275 325 375 445 2 60 Maximum 335 395 430 535.





Part

2021

Description

N-Channel Small Signal MOSFET



Feature


Shenzhen Tuofeng Semiconductor Technolog y Co., Ltd 2021 N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) 20 Rds(o n) (ȍ) 0.310@ VGS=4.5V 0.360@ VGS=2.5V 0.460@ VGS=1.8V Descriptions The 2021 is N-Channel enhancement MOS Field Eff ect Transistor. Uses advanced trench te chnology and design to provide excellen t RDS (ON) with low gate charge. This d evice is suitable f.
Manufacture

Tuofeng Semiconductor

Datasheet
Download 2021 Datasheet




 2021
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2021
N-Channel, 20V, 0.89A, Small Signal MOSFET
VDS (V)
20
Rds(on) (ȍ)
0.310@ VGS=4.5V
0.360@ VGS=2.5V
0.460@ VGS=1.8V
Descriptions
The 2021 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, load switch and level shift.
Standard Product 2021 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance
z Extremely Low Threshold Voltage
z Small package SOT-323
Applications
z DC-DC converter circuit
z Small Signal Switch
z Load Switch
z Level Shift
z
SOT-323
D
3
12
GS
Pin configuration (Top view)




 2021
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2021
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA =25°C
Symbol
VDS
VGS
ID
10 S
Steady State
20
±6
0.58 0.55
Unit
V
A
Maximum Power Dissipation
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
TA =25°C
PD
IDM
TJ
TL
Tstg
0.37 0.31
1.4
150
260
-55 to 150
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a t ” 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t ” 10 s
Steady State
Junction-to-Case Thermal Resistance
Steady State
Symbol
RșJA
RșJA
RșJC
Typical
275
325
375
445
260
Maximum
335
395
430
535
300
Unit
°C/W




 2021
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2021
Electronics Characteristics (Ta=25oC, unless otherwise noted)
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
IGSS
VGS = 0 V, ID = 250uA
VDS =16 V, VGS = 0V
VDS = 0 V, VGS =±5V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250uA
VGS = 4.5V, ID = 0.55A
Drain-to-source On-resistance
RDS(on)
VGS = 2.5V, ID = 0.45A
VGS = 1.8V, ID = 0.35A
Forward Transconductance
gFS VDS = 5 V, ID = 0.55A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGS = 0 V, f = 100 kHz, VDS =
10 V
VGS = 4.5 V, VDS = 10 V,
ID = 0.55A
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(OFF)
tf
VDD=10V, VGS=4.5V,
ID=0.55A, RG=6Ω
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD VGS = 0 V, IS = 0.35A
Min
20
0.45
0.5
Typ Max Unit
V
1 uA
5 uA
0.58 0.85 V
220 310
260 360 mŸ
320 460
2.0 S
50
13 pF
8
1.15
0.06
0.15
nC
0.23
22
80
ns
700
380
0.7 1.5 V




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