2026

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2026 P-Channel 1.25-W, 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.056 at VGS = - 4.5 V - 20 0.069 at VGS = - 2.5 V 0.086 at VGS = - 1.8 V ID (A) - 3.2 - 2.8 - 2.3 TO-236 (SOT-23) G1 S2 3D Top View 2026 *Marking Code:262TF FEATURES Power MOSFETs: 1.8 V Rated Pb-free Available RoHS* COMPLIANT ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TA = 25 °C ID Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b TA = 25 °C IDM IS PD Operating Junction and Storage Temperature Range TJ, Tstg Limit - 20 ± 12 - 3.2 -12 - 1.6 1.25 - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 Board. b. t ≤ 5 sec. t ≤ 5 sec Steady State Symbol RthJA Typical 130 Maximum 100 Unit °C/W 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2026 SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = - 10 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 12 V VDS = - 16 V, VGS = 0 V On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 4.5 V VDS ≤ - 5 V, VGS = - 2.5 V VGS = - 4.5 V, ID = - 3.2...