D5N50

AOD5N50 500V,5A N-Channel MOSFET General Description Product Summary The AOD5N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested! 100% Rg Tested! 600V@150℃ 5A < 1.6Ω Top View TO252 DPAK Bottom View D D S G G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentB TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy H ID IDM IAR EAR EAS Peak diode recovery dv/dt dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 500 ±30 5 3.1 17 2.8 118 235 5 104 0.83 -50 to 150 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Typical 43 1 Maximum 55 0.5 1.2 D S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev0: June 2010 Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOD5N50 Electrical Characteristics (T...