70N03 Power-Transistor Datasheet

70N03 Datasheet, PDF, Equivalent


Part Number

70N03

Description

Power-Transistor

Manufacture

Tuofeng Semiconductor

Total Page 7 Pages
Datasheet
Download 70N03 Datasheet


70N03
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
V DS
R DS(on),max
ID
70N03
30 V
8.0 m
70 A
TO-251
3
2
1
Type
70N03
Package
TO-251
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=70 A
Avalanche current, single pulse I AS T C=25 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
Unit
70
280
57
70
±20
68
-55 ... +175
55/175/56
A
mJ
A
V
W
°C
1

70N03
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm2 cooling area3)
70N03
min.
Values
typ.
Unit
max.
- - 2.2 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 250uA
30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
1.0
3.0
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
±100 nA
Gate-source leakage current
Drain-source on-state resistance
I GSS
V GS=±20 VV, DS=0 V
R DS(on)
V GS=4.5 V, I D=20A
V GS=10 V, I D=40A
-
-
-
±100 nA
13
m
8
2


Features Shenzhen Tuofeng Semiconductor Technolog y Co., Ltd Power-Transistor Features N-channel - Enhancement mode • Aut omotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operat ing temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 1 00% Avalanche tested Product Summary V DS R DS(on),max ID 70N03 30 V 8.0 m 70 A TO-251 3 2 1 Type 70N03 Packa ge TO-251 Maximum ratings, at T j=25 C, unless otherwise specified Paramet er Symbol Conditions Continuous drai n current1) I D T C=25 °C, V GS=10 V Pulsed drain current2) I D,pulse T C= 25 °C Avalanche energy, single pulse E AS I D=70 A Avalanche current, sing le pulse I AS T C=25 °C Gate source v oltage V GS Power dissipation P tot T C=25 °C Operating and storage tempe rature T j, T stg IEC climatic categor y; DIN IEC 68-1 Value Unit 70 280 57 70 ±20 68 -55 ... +175 55/175/56 A m J A V W °C 1 Shenzhen Tuofeng Semico nductor Technology Co., Ltd Parameter Symbol Conditions Thermal characteristics2) T.
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