70N03 MOSFET Datasheet

70N03 Datasheet, PDF, Equivalent


Part Number

70N03

Description

N-Channel MOSFET

Manufacture

CANYU

Total Page 5 Pages
Datasheet
Download 70N03 Datasheet


70N03
70N03
N-Channel MOSFET
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30 +0.1
-0.1
0.50 +0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
m ax
2.3
4 .60 +0.15
-0.15
0.60+ 0.1
- 0.1
1 Gate
2 Drain
3 Source G
D
S
Features
VDS (V) = 30V
ID = 33A (VGS = 10V)
RDS(ON) 4.3mΩ (VGS = 10V)
RDS(ON) 6.5mΩ (VGS = 4.5V)
T
Absolute Maximum Ratings Ta = 25
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current (Note.1)
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient (Note.1)
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Ta=25
Tc=70
Tc=25
Ta=70
t 10 sec
Steady State
Note.1: Surface Mounted on FR4 Board, t 10 sec.
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJC
TJ
Tstg
Rating
30
±20
33
70
100
88
8.3
18
50
1.5
150
-55 to 150
Unit
V
A
W
/W

70N03
70N03
N-Channel MOSFET
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
Gate Threshold Voltage
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS(On)
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Maximum Body-Diode Continuous Current
Pulsed Current
Diode Forward Voltage
ID(ON)
gFS
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
IS
ISM
VSD
Test Conditions
ID=250μA, VGS=0V
VDS=30V, VGS=0V
VDS=30V, VGS=0V, TJ=125
VDS=0V, VGS=±20V
VDS=VGS , ID=250μA
VGS=10V, ID=20A
VGS=10V, ID=20A TJ=125
VGS=4.5V, ID=20A
VGS=10V, VDS=5V
VDS=15V, ID=20A
VGS=0V, VDS=25V, f=1MHz (Note.1)
VGS=0V, VDS=0V, f=1MHz (Note.1)
VGS=10V, VDS=15V, ID=50A (Note.1)
VGS=10V, VDS=15V, RL=0.3Ω,
RG=2.5Ω,ID=50A (Note.1)
IF= 50A, dI/dt= 100A/μs
IS=100A,VGS=0V
Note.1: Pulse test; pulse width 300us, duty cycle 2%.
Min Typ Max Unit
30 V
1
μA
50
±100 nA
1 3V
3.5 4.3
7 mΩ
5.1 6.5
50 A
20 S
5100
860 pF
430
0.5 1 1.5 Ω
90 135
18 nC
16
12 20
12 20
40 60 ns
10 15
40 80
8.3
A
100
1.2 1.5 V


Features 70N03 N-Channel MOSFET TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0. 50 +0.8 -0.7 Unit: mm +1.50 0.15 -0.1 5 3.80 +5.55 0.15 -0.15 + 0.150 .5 0 -0.15 + 0.281 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0. 60+ 0.1 - 0.1 + 0.252 .6 5 -0.1 1 Gat e 2 Drain 3 Source G D S ■ Features ● VDS (V) = 30V ● ID = 33A (VGS = 10V) ● RDS(ON) < 4.3mΩ (VGS = 10V) ● RDS(ON) < 6.5mΩ (VGS = 4.5V) T +9.70 0.2 -0.2 ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltag e Gate-Source Voltage Parameter Conti nuous Drain Current (Note.1) Pulsed Dr ain Current Power Dissipation Thermal Resistance.Junction- to-Ambient (Note. 1) Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperatu re Range Ta=25℃ Tc=70℃ Tc=25℃ Ta =70℃ t ≤ 10 sec Steady State Note. 1: Surface Mounted on FR4 Board, t ≤ 10 sec. Symbol VDS VGS ID IDM PD RthJA RthJC TJ Tstg Rating 30 ±20 33 70 10 0 88 8.3 18 50 1.5 150 -55 to 150 Unit V A W ℃/W ℃ 70N03 N-Channel MOSFET ■ Electrical Charac.
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