90N03 Datasheet: Power-Transistor





90N03 Power-Transistor Datasheet

Part Number 90N03
Description Power-Transistor
Manufacture Tuofeng Semiconductor
Total Page 7 Pages
PDF Download Download 90N03 Datasheet PDF

Features: Shenzhen Tuofeng Semiconductor Technolog y Co., Ltd Power-Transistor Features N-channel - Enhancement mode • Aut omotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operat ing temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 1 00% Avalanche tested Product Summary V DS R DS(on),max ID 90N03 30 V 6.0 m 80 A TO-251 3 2 1 Type 90N03L Pac kage TO-251 Marking 90N03L Maximum ra tings, at T j=25 °C, unless otherwise specified Parameter Symbol Condition s Continuous drain current1) I D T C= 25 °C, V GS=10 V Pulsed drain current 2) I D,pulse T C=25 °C Avalanche ene rgy, single pulse E AS I D=80 A Avala nche current, single pulse I AS T C=25 °C Gate source voltage V GS - Powe r dissipation P tot T C=25 °C Operat ing and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - Value Unit 80 320 240 80 ±20 95 -55 ... +175 55/175/56 A mJ A V w °C 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd 90N03 Parameter Symbol Condit.

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
V DS
R DS(on),max
ID
90N03
30 V
6.0 m
80 A
TO-251
3
2
1
Type
90N03L
Package
TO-251
Marking
90N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A
Avalanche current, single pulse I AS T C=25 °C
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1
-
Value
Unit
80
320
240
80
±20
95
-55 ... +175
55/175/56
A
mJ
A
V
w
°C
1

                    






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