90N03

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Product Summary V DS R DS(on),max ID 90N03 30 V 6.0 mΩ 80 A TO-251 3 2 1 Type 90N03L Package TO-251 Marking 90N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=80 A Avalanche current, single pulse I AS T C=25 °C Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - Value Unit 80 320 240 80 ±20 95 -55 ... +175 55/175/56 A mJ A V w °C 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd 90N03 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) min. Values typ. Unit max. - - 1.1 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 30 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=250uA 1.0 1.5 Zero gate voltage drain current I DSS V DS=24 V, V GS=0 ...