Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Power-Transistor
Features • N-channel - Enhancement mode • Automotiv...
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Power-
Transistor
Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested
Product Summary V DS R DS(on),max ID
90N03
30 V 6.0 mΩ 80 A
TO-251
3
2 1
Type 90N03L
Package TO-251
Marking 90N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A
Avalanche current, single pulse I AS T C=25 °C
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1
-
Value
Unit
80
320 240 80 ±20 95 -55 ... +175 55/175/56
A
mJ A V w °C
1
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
90N03
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
- - 1.1 K/W - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250uA
1.0
1.5
Zero gate voltage drain current
I DSS
V DS=24 V, V GS=0 ...