Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SCHOTTKY BARRIER DIODE
MBR2040CT
MAIN CHARACTERISTICS
IF(AV) VRRM...
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SCHOTTKY BARRIER DIODE
MBR2040CT
MAIN CHARACTERISTICS
IF(AV) VRRM Tj VF(max)
20(2×10)A
40 V 175 ℃ 0.6V (@Tj=125℃)
z z
APPLICATIONS
z High frequency switch power supply
z Free wheeling diodes, polarity protection applications
Package
TO-22O
TO-22OF
TO-220HF
z z, z z, z(RoHS)
FEATURES
zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction
Temperature zGuard ring for overvoltage
protection,High reliability zRoHS product
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
ABSOLUTE RATINGS (Tc=25℃)
Parameter Repetitive peak reverse voltage
Symbol VRRM
Maximum DC blocking voltage
TC=150℃ Average forward (TO-220)
current
TC=125℃ (TO-220F,
TO-220HF)
per device
per diode
VDC IF(AV)
Surge non repetitive forward current ( 8.3ms — JEDEC ) 8.3 ms single half-sine-wave (JEDEC Method)
IFSM
Maximum junction temperature
Tj
Storage temperature range
TSTG
MBR2040CT
Value
40
Unit
V
40 V
20 A
10
150 A
175 -40~+150
℃ ℃
ELECTRICAL CHARACTERISTICS
Parameter IR
Tests conditions
Tj =25℃ Tj =125℃
VR=VRRM
Value(min) Value(typ) Value(max) 20 20
VF
Tj =25℃ Tj =125℃
IF=10A
0.63 0.7 0.56 0.6
Unit μA mA V V
THERMAL CHARACTERISTICS
Parameter Thermal resistance from junction to case
TO-220 TO-220F TO-220HF
Symbol Rth(j-c)
Value(min) Value(max) Unit
1.7 2.7 ℃/W 2.7
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
MBR2040C...