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MBR10200CT Dataheets PDF



Part Number MBR10200CT
Manufacturers Tuofeng Semiconductor
Logo Tuofeng Semiconductor
Description SCHOTTKY BARRIER DIODE
Datasheet MBR10200CT DatasheetMBR10200CT Datasheet (PDF)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SCHOTTKY BARRIER DIODE MBR10200CT MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10(2×5)A 200 V 175 ℃ 0.75V (@Tj=125℃) z z APPLICATIONS z High frequency switch power supply z Free wheeling diodes, polarity protection applications TO-22OC z z, z z, z(RoHS) FEATURES zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction Temperature zGuard ring for overvoltage protection,High reliability zRoHS prod.

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SCHOTTKY BARRIER DIODE MBR10200CT MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10(2×5)A 200 V 175 ℃ 0.75V (@Tj=125℃) z z APPLICATIONS z High frequency switch power supply z Free wheeling diodes, polarity protection applications TO-22OC z z, z z, z(RoHS) FEATURES zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction Temperature zGuard ring for overvoltage protection,High reliability zRoHS product TO-22OHF TO-22OF 1/6 Shenzhen Tuofeng Semiconductor Technology Co., Ltd ABSOLUTE RATINGS (Tc=25℃) Parameter Repetitive peak reverse voltage Symbol VRRM Maximum DC blocking voltage TC=150℃ Average forward (TO-220C) current TC=125℃ (TO-220F, TO-220HF) per device per diode VDC IF(AV) Surge non repetitive forward current ( 8.3ms — JEDEC ) 8.3 ms single half-sine-wave (JEDEC Method) IFSM Maximum junction temperature Tj Storage temperature range TSTG Value 200 200 10 5 80 175 -40~+150 Unit V V A A ℃ ℃ ELECTRICAL CHARACTERISTICS Parameter IR Tests conditions Tj =25℃ Tj =125℃ VR=VRRM Value(min) Value(typ) Value(max) 10 5 VF Tj =25℃ Tj =125℃ Tj =25℃ Tj =125℃ IF=5A IF=10A 0.85 0.93 0.71 0.75 0.92 0.98 0.82 0.86 Unit μA mA V V V V THERMAL CHARACTERISTICS Parameter Symbol Thermal resistance from junction to case TO-220C TO-220F TO-220HF Rth(j-c) Value(min) Value(max) Unit 2.4 3.0 ℃/W 3.0 2/6 Shenzhen Tuofeng Semiconductor Technology Co., Ltd ELECTRICAL CHARACTERISTICS (curves) IF vs VF IR vs VR IF(AV) vs TC CT vs VR 3/6 Shenzhen Tuofeng Semiconductor Technology Co., Ltd PACKAGE MECHANICAL DATA TO-220C Unit :mm E φP B b ee L2 D2 Q LD A F Q1 c symbol A B b c D D2 E e F L L2 Q Q1 P MIN 4.30 1.10 0.70 0.40 15.20 9.00 9.70 2.39 1.25 12.60 2.80 2.60 2.20 3.50 MAX 4.70 1.40 0.95 0.65 16.20 9.40 10.10 2.69 1.40 13.60 3.20 3.00 2.60 3.80 4/6 Shenzhen Tuofeng Semiconductor Technology Co., Ltd PACKAGE MECHANICAL DATA TO-220F Unit :mm E φP F Q D L2 L B1 B eb A Q1 c Symbol A B B1 b c D E e F L L2 ΦP Q Q1 Min Max 4.3 4.7 1.5 1.75 1.1 1.35 0.5 0.75 0.5 0.75 14.5 15.5 9.96 10.36 2.54(typ) 2.8 3.2 12.7 13.7 3.6 4.0 3.3 3.7 2.5 2.9 2.5 2.9 5/6 Shenzhen Tuofeng Semiconductor Technology Co., Ltd PACKAGE MECHANICAL DATA TO-220HF Unit :mm E φP A F L2 D2 Q LD B1 b ee c Q1 Symbol A B1 b c D D2 E e F L L2 ΦP Q Q1 Min Max 4.0 5.0 0.87 1.27 0.72 0.92 0.5 0.70 15.0 16.5 7.8 9.4 9.62 10.62 2.54(typ) 2.3 3.3 12.0 14.0 3.1 3.5 3.0 3.4 3.15 3.55 2.2 2.5 6/6 .


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