Document
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SCHOTTKY BARRIER DIODE
MBR20150CT
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A
150 V 175 ℃ 0.75V (@Tj=125℃)
z z
APPLICATIONS
z High frequency switch power supply
z Free wheeling diodes, polarity protection applications
TO-22O
z z, z z, z(RoHS)
FEATURES
zCommon cathode structure zLow power loss, high efficiency zHigh Operating Junction
Temperature zGuard ring for overvoltage
protection,High reliability zRoHS product
TO-22OHF
TO-22OF
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
ABSOLUTE RATINGS (Tc=25℃)
Parameter Repetitive peak reverse voltage
Symbol VRRM
Maximum DC blocking voltage
TC=150℃ Average forward (TO-220)
current
TC=125℃ (TO-220F
TO-220HF)
per device
per diode
VDC IF(AV)
Surge non repetitive forward current ( 8.3ms — JEDEC ) 8.3 ms single half-sine-wave (JEDEC Method)
IFSM
Maximum junction temperature
Tj
Storage temperature range
TSTG
MBR20150CT
Value
150
Unit
V
150 V
20 A
10
200 A
175 -40~+150
℃ ℃
ELECTRICAL CHARACTERISTICS
Parameter IR
Tests conditions
Tj =25℃ Tj =125℃
VR=VRRM
Value(min) Value(typ) Value(max) 10 5
VF
Tj =25℃ Tj =125℃
IF=10A
0.83 0.9 0.68 0.75
Unit μA mA V V
THERMAL CHARACTERISTICS
Parameter
Symbol
Thermal resistance from junction to case
TO-220 TO-220F TO-220HF
Rth(j-c)
Value(min) Value(max) Unit
2.2 3.0 ℃/W 3.0
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
MBR20150CT
ELECTRICAL CHARACTERISTICS (curves)
IF vs VF
IR vs VR
IF(AV) vs TC
CT vs VR
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PACKAGE MECHANICAL DATA TO-220
MBR20150CT
Unit :mm
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
PACKAGE MECHANICAL DATA TO-220F
MBR20150CT
Unit :mm
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
PACKAGE MECHANICAL DATA TO-220HF
MBR20150CT
Unit :mm
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