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DTC114TSA Dataheets PDF



Part Number DTC114TSA
Manufacturers SeCoS
Logo SeCoS
Description NPN Digital Transistors
Datasheet DTC114TSA DatasheetDTC114TSA Datasheet (PDF)

Elektronische Bauelemente DTC114TE/DTC114TUA/DTC114TKA DTC114TCA/TC114TSA NPN Digital Transistors (Built-in Resistors) FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting input resistors * Only the on/off confitions need to be set for operation, making device design easy. * The bias resistors consis of thin-film resistors with compete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating.

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Elektronische Bauelemente DTC114TE/DTC114TUA/DTC114TKA DTC114TCA/TC114TSA NPN Digital Transistors (Built-in Resistors) FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting input resistors * Only the on/off confitions need to be set for operation, making device design easy. * The bias resistors consis of thin-film resistors with compete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. PIN CONNENCTIONS AND MARKING DTC114TE SOT-523 (1) Base (2) Emitter (3) Collector Abbreviated symbol: 04 DTC114TKA (1) Base (2) Emitter (3) Collector SOT-23-3L Abbreviated symbol:04 DTC114TSA TO-92S (1) Emitter (2) Collector (3) Base DTC114TUA SOT-323 (1)(1B)aBsaese (2)(2E)mEimtteitrter (3)(3C)oClloelcletocrtor Abbreviated symbol: 04 DTAC111144ETCA (1) Base (1) Base (2) Emitter (2) Emitter (3) Collector (3) Collector SOT-23 Abbreviated symbol: 04 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed indivlidua Page 1 of 2 Elektronische Bauelemente DTC114TE/DTC114TUA/DTC114TKA DTC114TCA/TC114TSA NPN Digital Transistors (Built-in Resistors) MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter LIMITS(DTC114T□) E UA KA CA SA VCBO Collector-Base Voltage 50 VCEO VEBO IC PC Tj Collector-Emitter Voltage 50 Emitter-Base Voltage 5 Collector Current -Continuous 100 Collector Dissipation 150 200 300 Junction temperature 150 TJ, Tstg Junction and Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25℃ -55~+150 unless otherwise specified) Parameter Symbol Test conditions MIN TYP Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Ic=50µA,IE=0 Ic=1mA,IB=0 IE=50µA,IC=0 VCB=50V,IE=0 VEB=4V,IC=0 VCE=5V,IC=1mA IC=10mA,IB=1mA VCE=10V,IE=-5mA, f=100MHz 50 50 5 100 300 250 Imput resistor R1 7 10 Units V V V mA mW ℃ ℃ MAX 0.5 0.5 600 0.3 13 UNIT V V V uA uA V MHz kΩ Typical Characteristics http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individua Page 2 of 2 .


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