P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C975F3 Issued Date : 2015.12.10 Revised Date : Page No. : 1/9
P-Channel Enhancem...
Description
CYStech Electronics Corp.
Spec. No. : C975F3 Issued Date : 2015.12.10 Revised Date : Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTE050P10F3
BVDSS
ID @ VGS=-10V, TC=25°C
ID @ VGS=-10V, TA=25°C
RDSON(TYP) @ VGS=-10V, ID=-20A
Features
Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package
-100V -44A -4.6A 40mΩ
Symbol
MTE050P10F3
Outline
TO-263
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTE050P10F3-0-T7-X
Package
Shipping
TO-263 (Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE050P10F3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C975F3 Issued Date : 2015.12.10 Revised Date : Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=-10V Continuous Drain Current @ TC=100°C, VGS=-10V Pulsed Drain Current
Continuous Drain Current @ TA=25°C , VGS=10V
Continuous Drain Current @ TA=70°C , VGS=10V
Avalanche Current
Avalanche Energy @ L=1mH, ID=-21A, VDD=-25V
Repetitive Avalanche Energy@ L=0.1mH
Power Dissipation
TC=25°C TC=100°C
Power Dissipation
TA=25°C TA=70°C
Operating Junction an...
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