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MTE05N10E3 Dataheets PDF



Part Number MTE05N10E3
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTE05N10E3 DatasheetMTE05N10E3 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C928E3 Issued Date : 2013.11.04 Revised Date : 2013.11.12 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE05N10E3 BVDSS ID RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 100V 140A 5.9mΩ 6.2mΩ Features • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package Symbol MTE05N10E3 Outline TO-220 G:Gate D:Drain S:Source GDS Ordering Information Device MTE05N10E3-.

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