MTE05N10FP

CYStech Electronics Corp. Spec. No. : C928FP Issued Date : 2015.03.16 Revised Date : 2015.05.04 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE05N10FP BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 100V 109A 5.9mΩ 6.2mΩ Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating package, front/back side insulating voltage=2500V(AC) RoHS compliant package Symbol MTE05N10FP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device MTE05N10FP-0-UB-S Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE05N10FP CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V(silicon limit) Continuous Drain Current @ TC=100°C, VGS=10V(silicon limit) Continuous Drain Current @ TC=25°C, VGS=10V(package limit) (Note 1) Pulsed Drain Current (Note 3) Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Avalanche Current Avalanche Energy @ L=1mH, ID=25A, RG=25Ω (Note 2) (Note 2) (Note 3) (Note 2) Repetitive Ava...