MTE080N15KJ3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE080N15KJ3 Spec. No. : C949J3 Issued Date : 2015.11.25 Revised Date : Page No. : 1/ 9 Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic ESD Protected Gate Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=10A 150V 14A 3.2A 80 mΩ(typ) Symbol MTE080N15KJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTE080N15KJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape& reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE080N15KJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C949J3 Issued Date : 2015.11.25 Revised Date : Page No. : 2/ 9 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V Continuous Drain Current @TC=100°C, VGS=10V Continuous Drain Current @TA=25°C, VGS=10V Continuous Drain Current @TA=70°C, VGS=10V Pulsed Drain Current @ VGS=10V Avalanche Current Single Pulse Avalanche Energy @ L=10mH, ID=5A, VDD=50V TC=25°C Power Dissipation TC=100°C TA=25°C TA=70°C Operating Junction and Storage Temperature (Note 1) (Note ...