MTE09N06J3

CYStech Electronics Corp. Spec. No. : C912J3 Issued Date : 2015.06.17 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTE09N06J3 BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=7V, ID=20A 60V 50A 7 mΩ(typ) 7.9 mΩ(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package Symbol MTE09N06J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTE09N06J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape& reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE09N06J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C912J3 Issued Date : 2015.06.17 Revised Date : Page No. : 2/ 9 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V(silicon limit) (Note 1) Continuous Drain Current @TC=100°C, VGS=10V(silicon limit) (Note 1) Continuous Drain Current @TC=25°C, VGS=10V(package limit) (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current (Note 3) Single Pulse Avalanche ...