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MTE015N10QH8

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp. Spec. No. : C168H8 Issued Date : 2016.06.02 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTE015N10QH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDSON(typ)@VGS=10V, ID=20A 100 V 39 A 8.8A 12.6 mΩ Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead pl...

Cystech Electonics

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MTE015N10QH8 N-Channel Enhancement Mode Power MOSFET - Cystech Electonics

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