MTE015N15RE3

CYStech Electronics Corp. Spec. No. : C838E3 Issued Date : 2016.06.13 Revised Date : 2016.06.23 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTE015N15RE3 BVDSS ID@VGS=10V, TC=25°C Features RDS(ON)@VGS=10V, ID=30A Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic Pb-free lead plating and RoHS compliant package 150V 90A 16mΩ (typ) Symbol MTE015N15RE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTE015N15RE3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE015N15RE3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C838E3 Issued Date : 2016.06.13 Revised Date : 2016.06.23 Page No. : 2/8 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=125°C Pulsed Drain Current (Note 1) Avalanche Current @L=0.1mH Avalanche Energy @ L=5mH, ID=20A, VDD=50V (Note 2) Repetitive Avalanche Energy@ L=0.05mH Total Power Dissipation (TC=25℃) Total Power Dissipation (TC=100℃) Total Power Dissipation (TA=25℃) Total Power Dissipation (TA=100℃) ...