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MTE50N10QE3 Dataheets PDF



Part Number MTE50N10QE3
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTE50N10QE3 DatasheetMTE50N10QE3 Datasheet (PDF)

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE50N10QE3 Spec. No. : C168E3 Issued Date : 2016.06.24 Revised Date : Page No. : 1/ 8 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=15A 100V 29A 5.5A 26.4 mΩ(typ) Symbol MTE50N10QE3 Outline TO-220 G:Gate D:Drain S:Source GDS Ordering Information Device MTE50N10QE3-0-UB-X .

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE50N10QE3 Spec. No. : C168E3 Issued Date : 2016.06.24 Revised Date : Page No. : 1/ 8 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=15A 100V 29A 5.5A 26.4 mΩ(typ) Symbol MTE50N10QE3 Outline TO-220 G:Gate D:Drain S:Source GDS Ordering Information Device MTE50N10QE3-0-UB-X Package TO-220 (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE50N10QE3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C168E3 Issued Date : 2016.06.24 Revised Date : Page No. : 2/ 8 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current (Note 3) Single Pulse Avalanche Energy @ L=0.1mH, ID=29 Amps, VDD=50V (Note 4) Repetitive Avalanche Energy (Note 3) TC=25°C (Note 1) Power Dissipation TC=100°C TA=25°C (Note 1) (Note 2) TA=70°C (Note 2) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature Symbol VDS VGS ID IDSM IDM IAS EAS EAR PD PDSM TL Limits 100 ±20 29* 20.5* 5.5 4.4 116* 29 42 6 60 30 2.1 1.4 300 TPKG 260 Tj, Tstg -55~+175 Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 2) Symbol RθJC RθJA Value 2.5 58 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. 100% tested by conditions of L=0.1mH, IAS=24A, VGS=10V, VDD=25V. MTE50N10QE3 CYStek Product Specification CYStech Electron.


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