Document
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE50N10QE3
Spec. No. : C168E3 Issued Date : 2016.06.24 Revised Date : Page No. : 1/ 8
Features
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=15A
100V 29A
5.5A 26.4 mΩ(typ)
Symbol
MTE50N10QE3
Outline
TO-220
G:Gate D:Drain S:Source
GDS
Ordering Information
Device MTE50N10QE3-0-UB-X
Package
TO-220 (RoHS compliant)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products Product name
MTE50N10QE3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C168E3 Issued Date : 2016.06.24 Revised Date : Page No. : 2/ 8
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
(Note 1)
Continuous Drain Current @TC=100°C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current
(Note 3)
Single Pulse Avalanche Energy @ L=0.1mH, ID=29 Amps,
VDD=50V
(Note 4)
Repetitive Avalanche Energy
(Note 3)
TC=25°C
(Note 1)
Power Dissipation
TC=100°C TA=25°C
(Note 1) (Note 2)
TA=70°C
(Note 2)
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Symbol
VDS VGS ID
IDSM IDM IAS EAS EAR PD
PDSM
TL
Limits
100 ±20 29* 20.5* 5.5 4.4 116* 29
42
6 60 30 2.1 1.4
300
TPKG
260
Tj, Tstg -55~+175
Unit
V A
mJ W
°C
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol RθJC RθJA
Value 2.5 58
Unit °C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C. 4. 100% tested by conditions of L=0.1mH, IAS=24A, VGS=10V, VDD=25V.
MTE50N10QE3
CYStek Product Specification
CYStech Electron.