N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C893FP Issued Date : 2013.05.27 Revised Date : Page No. : 1/ 8
N-Channel Enhance...
Description
CYStech Electronics Corp.
Spec. No. : C893FP Issued Date : 2013.05.27 Revised Date : Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE50N10FP BVDSS ID RDS(ON)@VGS=10V, ID=15A
RDS(ON)@VGS=6V, ID=10A
100V 23A 32 mΩ(typ)
35 mΩ(typ)
Description
The MTE50N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating package, front/back side insulating voltage=2500V(AC) RoHS compliant package
Symbol
MTE50N10FP
Outline
TO-220FP
G:Gate D:Drain S:Source
MTE50N10FP
GDS
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C893FP Issued Date : 2013.05.27 Revised Date : Page No. : 2/ 8
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
(Note 1)
Continuous Drain Current @TC=100°C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current
(Note 3)
Single Pulse Avalanche Energy @ L=0.14mH, ID=23 Amps,
VDD=50V
(Note 2)
Repetitive Avalanche Energy
(Note 3)
TC=25°C
(Note 1)
Power Dissipation
TC=100°C TA=25°C
...
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