MTED6N25FP

CYStech Electronics Corp. Spec. No. : C894FP Issued Date : 2015.09.10 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTED6N25FP BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=5A 250V 9A 410 mΩ(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating package, front/back side insulating voltage=2500V(AC) RoHS compliant package Symbol MTED6N25FP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device MTED6N25FP-0-UB-X Package TO-220FP (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTED6N25FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C894FP Issued Date : 2015.09.10 Revised Date : Page No. : 2/ 8 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current (Note 3) Single Pulse Avalanche Energy @ L=2mH, ID=3 Amps, VDD=50V (Note 2&4) Repetitive Avalanche Energy (Note 3) TC=25°C (Note 1) ...