N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C797J3 Issued Date : 2011.09.14 Revised Date : 2013.12.26 Page No. : 1/11
N-Chan...
Description
CYStech Electronics Corp.
Spec. No. : C797J3 Issued Date : 2011.09.14 Revised Date : 2013.12.26 Page No. : 1/11
N-Channel Enhancement Mode Power MOSFET
MTN4N65J3
BVDSS : 650V RDS(ON) : 3.0Ω(typ.)
ID : 4A
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package
Applications
Open Framed Power Supply Adapter STB
Symbol
MTN4N65J3
Outline
TO-252(DPAK)
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTN4N65J3-0-T3-G
Package
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN4N65J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C797J3 Issued Date : 2011.09.14 Revised Date : 2013.12.26 Page No. : 2/11
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TA=25℃)
Total Power Dissipation (TC=25...
Similar Datasheet