MTN4N65CJ3

CYStech Electronics Corp. Spec. No. : C080J3 Issued Date : 2016.06.27 Revised Date : Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTN4N65CJ3 BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TC=100°C Features RDS(ON)@VGS=10V, ID=2A Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free Lead Plating and Halogen-free Package 650V 4A 2.4A 1.8Ω(typ) Applications Open Framed Power Supply Adapter STB Symbol MTN4N65CJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTN4N65CJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTN4N65CJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C080J3 Issued Date : 2016.06.27 Revised Date : Page No. : 2/11 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Avalanche Current (Note 1) Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds Total Power Dissipation (TC=25℃) ...