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CGY121B

Siemens Semiconductor Group

GaAs MMIC

CGY 121 B GaAs MMIC Preliminary Data l l l l l l l RF-in; -Vg Vcontrol 6 RF-GND 5 4 Variable gain amplifier (MMIC-Ampl...


Siemens Semiconductor Group

CGY121B

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Description
CGY 121 B GaAs MMIC Preliminary Data l l l l l l l RF-in; -Vg Vcontrol 6 RF-GND 5 4 Variable gain amplifier (MMIC-Amplifier) for mobile communication Gain Control range over 50dB Positive Control Voltage 50Ω input and output matched Low power consumption Operating voltage range: 2.7 to 6 V Frequency range 800 MHz ... 2.5 GHz 3 2 1 Vd2; RF-out RF-GND Vd1 ESD: Electrostatic discharge sensitive device, observe handling precautions! * ) Type Marking Ordering code (taped) Package1) CGY 121 B Y0S Q62702-G0071 MW-6 Maximum ratings Characteristics Drain voltage Neg. supply voltage Pos. control voltage Channel temperature Storage temperature range Total power dissipation (TS < 81°C) 2) Thermal resistance Characteristics Channel-soldering point (GND) 1) 2) Symbol Unit 8 -8 4 150 -55...+150 550 V V V °C °C mW VD VG Vcon TCh Tstg Ptot Symbol Unit 125 K/W RthChS Dimensions see page 9. Please care for sufficient heat dissipation on the pcb! ) * Pin-out changed compared to CGY120: 180° rotation Siemens Aktiengesellschaft 1 Semiconductor Group 1 04.08.98 HL HF PE GaAs/HB 1998-11-01 CGY 121 B Functional block diagram: VD1 (3) VD2 (1) Pin / -VG(4) Pout (1) Vcon (6) Control Circuit GND (2, 5) Pin # 1 2 3 4 5 6 VD2 / Pout RF-Gnd VD1 VG / Pin RF-Gnd Configuration Drain voltage 2nd stage / RF-0utput Drain voltage 1st stage Negative voltage at current control circuit (-4V) / RF-Input Vcontrol Positive voltage for gain control (0V....3V) Siemens Aktiengesellscha...




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