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CGY196

Siemens Semiconductor Group

GaAs MMIC

CGY 196 GaAs MMIC Preliminary Data l l l l l l l l l Broadband Power Amplifier [ 800..3500 Mhz ] DECT,PHS,PCS,GSM,AMPS...


Siemens Semiconductor Group

CGY196

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Description
CGY 196 GaAs MMIC Preliminary Data l l l l l l l l l Broadband Power Amplifier [ 800..3500 Mhz ] DECT,PHS,PCS,GSM,AMPS,WLAN,WLL Single Voltage Supply Operating voltage range: 2.0to 6 V Pout = 25.5dBm at Vd=2.4V Pout = 27.0dBm at Vd=3.0V Pout = 30.0dBm at Vd=5.0V Overall power added efficiency up to 50 % Easy external matching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package CGY 196 t.b.d. t.b.d. SCT598 Maximum ratings Characteristics Positive supply voltage Supply current Maximum input power Channel temperature Storage temperature Total power dissipation (Ts < 81 °C) Symbol VD max. Value 6 1.0 20 150 -55...+150 1.0 Unit V A dBm °C °C W ID Pinmax TCh Tstg Ptot PPulse Ts: Temperature at soldering point Pulse peak power Thermal Resistance Characteristics Channel-soldering point Symbol max. Value 70 Unit K/W 2.0 W RthChS Siemens Aktiengesellschaft Semiconductor Group 1 1 16.6.1998 1998-11-01 HL HF PE GaAs CGY 196 Functional Block Diagram VD1 VD2 RFin/Vg RFout/Vd3 G ND G ND G ND Pin # 1 2 3 4 5 6 7 8 Name Configuration RF input power + Gate voltage [0V internal] RF and DC ground Pos. drain voltage of the 2nd stage not connected not connected RF and DC ground Pos. drain voltage of the 1st stage RFin/Vg GND VD2 n.c. n.c. GND VD1 RFout/VD3 RF output power / Pos. drain voltage of the 3rd stage DC characteristics Characteristics Drain current stage 1 stage 2 stage 3 Transconductance stag...




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