CGY2010G

INTEGRATED CIRCUITS DATA SHEET CGY2010G; CGY2011G GSM 4 W power amplifiers Objective specification Supersedes data of 1995 Oct 25 File under Integrated Circuits, IC17 1996 Jul 08 Philips Semiconductors Objective specification GSM 4 W power amplifiers FEATURES Power Amplifier (PA) overall efficiency 45% 35.5 dB gain 0 dBm input power Gain control range >55 dB Integrated power sensor driver Low output noise floor of PA < −129 dBm/Hz in GSM RX band Wide operating temperature range −20 to +85 °C LQFP 48 pin package Compatible with power ramping controller PCA5075 Compatible with GSM RF transceiver SA1620. APPLICATIONS 880 to 915 MHz hand-held transceivers for E-GSM applications 900 MHz TDMA systems. QUICK REFERENCE DATA SYMBOL VDD IDD Pout(max) Tamb Note 1. For conditions, see Chapters “AC characteristics” and “DC characteristics”. ORDERING INFORMATION TYPE NUMBER CGY2010G CGY2011G PACKAGE NAME LQFP48 DESCRIPTION PARAMETER (1) positive supply voltage positive peak supply current maximum output power operating ambient temperature CGY2010G; CGY2011G GENERAL DESCRIPTION The CGY2010G and CGY2011G are GSM class 4 GaAs Monolithic Microwave Integrated Circuits (MMICs) power amplifiers specifically designed to operate at 4.8 V battery supply. These ICs also include a power sensor driver so that no directional coupler is required in the power control loop. Both ICs have the same performance but are issued from different wafer fabs. The PAs require only a 30 dB h...