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CGY2030M

NXP

DECT 500 mW power amplifier

INTEGRATED CIRCUITS DATA SHEET CGY2030M DECT 500 mW power amplifier Product specification Supersedes data of 1996 Jul 1...


NXP

CGY2030M

File Download Download CGY2030M Datasheet


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INTEGRATED CIRCUITS DATA SHEET CGY2030M DECT 500 mW power amplifier Product specification Supersedes data of 1996 Jul 12 File under Integrated Circuits, IC17 1997 Jan 17 Philips Semiconductors Product specification DECT 500 mW power amplifier FEATURES Power Amplifier (PA) overall efficiency 40% 27 dB gain 0 dBm input power Operation possible without negative supply Wide operating temperature range −30 to +85 °C SSOP16 package. APPLICATIONS 1.88 to 1.9 GHz transceivers for DECT applications 2 GHz transceivers (PHS, DCS). QUICK REFERENCE DATA SYMBOL VDD IDD Po Tamb Note 1. For conditions, see Chapters “AC characteristics” and “DC characteristics”. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME CGY2030M BLOCK DIAGRAM SSOP16 DESCRIPTION plastic shrink small outline package; 16 leads; body width 4.4 mm PARAMETER (1) positive supply voltage positive peak supply current output power operating ambient temperature − − − −30 MIN. TYP. 3.2 400 27 − − − − GENERAL DESCRIPTION CGY2030M The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply. When power control is not required, it can be operated without negative supply voltage. MAX. V UNIT mA dBm °C +85 VERSION SOT369-1 handbook, full pagewidth VDD1 8 VDD2 5 VDD3 13 CGY2030M RFI 9 16 RFO/VDD4 2, 3, 4, 6, 7, 11, 12, 14, 15 10 VGG1 1 VGG2 MBG631 Fig.1 Block diagram. 1997 Jan 17 2 Philips Semiconductors Product specificati...




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