DECT 500 mW power amplifier
INTEGRATED CIRCUITS
DATA SHEET
CGY2030M DECT 500 mW power amplifier
Product specification Supersedes data of 1996 Jul 1...
Description
INTEGRATED CIRCUITS
DATA SHEET
CGY2030M DECT 500 mW power amplifier
Product specification Supersedes data of 1996 Jul 12 File under Integrated Circuits, IC17 1997 Jan 17
Philips Semiconductors
Product specification
DECT 500 mW power amplifier
FEATURES Power Amplifier (PA) overall efficiency 40% 27 dB gain 0 dBm input power Operation possible without negative supply Wide operating temperature range −30 to +85 °C SSOP16 package. APPLICATIONS 1.88 to 1.9 GHz transceivers for DECT applications 2 GHz transceivers (PHS, DCS). QUICK REFERENCE DATA SYMBOL VDD IDD Po Tamb Note 1. For conditions, see Chapters “AC characteristics” and “DC characteristics”. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME CGY2030M BLOCK DIAGRAM SSOP16 DESCRIPTION plastic shrink small outline package; 16 leads; body width 4.4 mm PARAMETER (1) positive supply voltage positive peak supply current output power operating ambient temperature − − − −30 MIN. TYP. 3.2 400 27 − − − − GENERAL DESCRIPTION
CGY2030M
The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply. When power control is not required, it can be operated without negative supply voltage.
MAX. V
UNIT mA dBm °C
+85
VERSION SOT369-1
handbook, full pagewidth
VDD1 8
VDD2 5
VDD3 13
CGY2030M
RFI 9 16 RFO/VDD4
2, 3, 4, 6, 7, 11, 12, 14, 15
10 VGG1
1 VGG2
MBG631
Fig.1 Block diagram.
1997 Jan 17
2
Philips Semiconductors
Product specificati...
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