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CGY2032TS Dataheets PDF



Part Number CGY2032TS
Manufacturers NXP
Logo NXP
Description DECT 500 mW power amplifier
Datasheet CGY2032TS DatasheetCGY2032TS Datasheet (PDF)

INTEGRATED CIRCUITS DATA SHEET CGY2032TS DECT 500 mW power amplifier Product specification Supersedes data of 1998 Nov 23 File under Integrated Circuits, IC17 1999 Jul 21 Philips Semiconductors Product specification DECT 500 mW power amplifier FEATURES • Power Amplifier (PA) overall efficiency 55% • 27.5 dBm saturated output power at 3.2 V • 0 dBm input power • 40 dB linear gain • Operation without negative supply • Wide operating temperature range −30 to +85 °C • SSOP16 package. APPLICATIONS .

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INTEGRATED CIRCUITS DATA SHEET CGY2032TS DECT 500 mW power amplifier Product specification Supersedes data of 1998 Nov 23 File under Integrated Circuits, IC17 1999 Jul 21 Philips Semiconductors Product specification DECT 500 mW power amplifier FEATURES • Power Amplifier (PA) overall efficiency 55% • 27.5 dBm saturated output power at 3.2 V • 0 dBm input power • 40 dB linear gain • Operation without negative supply • Wide operating temperature range −30 to +85 °C • SSOP16 package. APPLICATIONS CGY2032TS • 1.88 to 1.9 GHz transceivers for DECT applications • 2 GHz transceivers [Personal Handy phone System (PHS), Digital Cellular System (DCS) and Personal Communication Services (PCS)]. GENERAL DESCRIPTION The CGY2032TS is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate from 3.6 V battery supply. No negative supply voltage is required for operation. QUICK REFERENCE DATA SYMBOL VDD IDD Po Tamb Note 1. For conditions, see Chapters “AC characteristics” and “DC characteristics”. ORDERING INFORMATION TYPE NUMBER CGY2032TS PACKAGE NAME SSOP16 DESCRIPTION plastic shrink small outline package; 16 leads; body width 4.4 mm VERSION SOT369-1 positive supply voltage positive peak supply current output power ambient temperature PARAMETER(1) MIN. − − − −30 TYP. 3.2 350 27.5 − MAX. − − − +85 UNIT V mA dBm °C BLOCK DIAGRAM handbook, halfpage VDD1 8 VDD2 VDD3 5 1 CGY2032TS RFI 11 16 15 10 GND1 6, 7 2, 3, 4 12, 13, 14 MGK735 RFO OPM GND2 GND3 Fig.1 Block diagram. 1999 Jul 21 2 Philips Semiconductors Product specification DECT 500 mW power amplifier PINNING SYMBOL VDD3 GND3 GND3 GND3 VDD2 GND2 GND2 VDD1 n.c. GND1 RFI GND3 GND3 GND3 OPM RFO PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 DESCRIPTION third stage supply voltage third stage ground supply third stage ground supply third stage ground supply second stage supply voltage second stage ground supply second stage ground supply first stage supply voltage not connected first stage ground supply PA input third stage ground supply third stage ground supply third stage ground supply output pre-matching PA output GND3 4 handbook, halfpage CGY2032TS VDD3 1 GND3 2 GND3 3 16 RFO 15 OPM 14 GND3 13 GND3 CGY2032TS VDD2 5 GND2 6 GND2 7 VDD1 8 MGK734 12 GND3 11 RFI 10 GND1 9 n.c. Fig.2 Pin configuration. FUNCTIONAL DESCRIPTION Amplifier The CGY2032TS is a 3-stage GaAs power amplifier capable of delivering 500 mW (typ.) at 1.9 GHz into a 50 Ω load. Each amplifier stage has an open-drain configuration. The drains have to be loaded externally by adequate reactive circuits which must also provide a DC path to the supply. The amplifier can be switched off by means of a single external PNP or PMOS series switch connected between the battery and the amplifier drains. This switch can also be used to vary the actual supply voltage applied to the amplifier and hence, control the output power. This device is specifically designed to work with a duty factor of 50% and can work up to 100% with good thermal performance printed-circuit boards. Biasing Internal biasing is provided inside the amplifier for class AB operation. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDD Tj(max) Ptot Pi Tstg Notes 1. On Philips evaluation board. 2. On Philips evaluation board, Ptot maximum value is 800 mW. PARAMETER operating supply voltage maximum operating junction temperature total power dissipation input power storage temperature note 2 CONDITIONS note 1 − − − − −55 MIN. MAX. 5.2 150 450 15 +125 V °C mW dBm °C UNIT 1999 Jul 21 3 Philips Semiconductors Product specification DECT 500 mW power amplifier HANDLING CGY2032TS Do not operate or store near strong electrostatic fields. Meets class 1 ESD test requirements [Human Body Model (HBM)], in accordance with “MIL STD 883C - method 3015”. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Note 1. On Philips evaluation board, Rth(j-a) value is typically 80 K/W. DC CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL Pins VDD1, VDD2 and VDD3 VDD IDD positive supply voltage positive peak supply current VDD = 3.2 V 1.8 − 3.2 − 4.2 800 V mA PARAMETER CONDITIONS MIN. TYP. MAX. UNIT PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 VALUE 145 UNIT K/W AC CHARACTERISTICS VDD = 3.2 V; fRF = 1900 MHz; Pi = 0 dBm; Tamb = 25 °C; duty factor δ = 50%; 50 Ω impedance system; measured and guaranteed on the CGY2032TS evaluation board; the circuit diagram is shown in Fig.5. SYMBOL Pi δ Po IDD η Pleak H2 H3 Stab Note 1. The device is adjusted to provide nominal value of load power into a 50 Ω load. The device is switched off and a 6 : 1 load replaces the 50 Ω load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees during a 60 seconds test period. input power duty factor output power total drain current efficiency RF leakage to output in power off state second harmonic level third harmonic level st.


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