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CGY31

Siemens Semiconductor Group

GaAs MMIC

GaAs MMIC q q q q q q q q q CGY 31 Two-stage monolithic microwave IC (MMIC amplifier) All-gold metallization Chip full...


Siemens Semiconductor Group

CGY31

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Description
GaAs MMIC q q q q q q q q q CGY 31 Two-stage monolithic microwave IC (MMIC amplifier) All-gold metallization Chip fully passivated Operating voltage range: 3 to 6 V 50 Ω input/output; RLIN RLOUT > 10 dB Gain: 18 dB at 1.6 GHz Low noise figure: 4 dB at 1.6 GHz 3 dB bandwidth: 2 GHz Hermetically sealed package ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Ordering Code Circuit Diagram (Pin Configuration) Package1) TO-12 CGY 31 Q68000-A6887 1 2 3 4 RF output, VS Interstage, VS RF input RF and DC ground, case 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 CGY 31 Maximum Ratings Parameter Supply voltage, TC ≤ 80 ˚C Total power dissipation, TC ≤ 50 ˚C Channel temperature Storage temperature range Thermal Resistance Channel - case RthchC 50 K/W Symbol VS Ptot Tch Tstg Values 6 2 150 – 55 … + 150 Unit V W ˚C Note: Exceeding any of the maximum ratings may cause permanent damage to the device. Appropriate handling procedures are required to protect the electrostatic sensitive IC against degradation due to excess voltage or excess current spikes. Excellent ground connection of lead 4 and the package (e. g. soldered on microstripline laminate) is required to achieve guaranteed RF performance and stable operation conditions and provides adequate heat sink. Low parasitic capacitance of the bias network to port 2 gives optimum gain and flatness. Input and output connections must be DC isolated by coupling capa...




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