CGY52

GaAs MMIC CGY 52 ________________________________________________________________________________________________________ Datasheet * Two stages monolithic microwave IC (MMICAmplifier) * All gold metallisation * Chip fully passivated * Operating voltage range: 2.7 to 5 V * 50 Ω input / output ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CGY 52 CGY52 Q68000-A8615 MW-7 Maximum ratings Drain voltage Channel temperature Storage temperature range Total power dissipation (TS < 55°C) 2) 3) Symbol Unit 6 150 -55...+150 1000 V °C °C mW VD TCh Tstg Ptot Thermal resistance Channel-soldering point (GND) 2) Junction-ambient 4) RthChS RthJA < 95 < 175 K/W K/W 1) 2) 3) 4) Dimensions see chapter Package Outlines TS is measured on the source 2 lead at the soldering point of the pcb. Please care for sufficient heat dissipation on the pcb! Package mounted on alumina 15mm x16.7 mm x0.7 mm Siemens Aktiengesellschaft pg. 1/4 12.02.96 HL EH PD 21 GaAs MMIC Electrical characteristics CGY 52 ________________________________________________________________________________________________________ TA = 25°C VD = 4.5 V RS = RL = 50Ω unless otherwise specified Characteristics Drain current Power Gain f = 200 MHz f = 900 MHz f = 1800 MHz Symbol min 13 14.5 12.5 - typ 160 14 15.5 13.5 3 4.8 7.5 8.5 7.5 12.5 9 10.5 10.5 12.5 11.5 max 220 4 - Unit mA dB ID G Gain flatness f = 200 MHz to 1800 MH...