CGY96

CGY 96 GaAs MMIC l l l l l l Power amplifier for GSM class 4 phones 3.2 W (35dBm) output power at 3.5 V Overall power added efficiency 50 % Fully integrated 3 stage amplifier Power ramp control Input matched to 50 ohms, simple output match ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package CGY 96 CGY 96 Q62702G63 MW 16 Maximum ratings Characteristics Positive supply voltage Supply current Channel temperature Storage temperature Pulse peak power dissipation duty cycle 12.5%, ton=0.577ms Total power dissipation (Ts ≤ 80 °C) Symbol VD max. Value 9 4 150 -55...+150 tbd tbd Unit V A °C °C W W ID TCh Tstg PPulse Ptot Ts: Temperature at soldering point Thermal Resistance Characteristics Channel-soldering point Symbol max. Value tbd Unit K/W RthChS Siemens Aktiengesellschaft Semiconductor Group 1 1 23.07.1998 1998-11-01 HL HF PE GaAs CGY 96 Functional block diagramm: VD1(1) VD2(2) Vcontrol(8) CGY96 Vneg(13) current control circuit RFin(16) VD3/RFout(4,5,6) GND1(14,15) GND2(17) Pin # 1 2 3 4,5,6 7 8 9,10,11, 12 13 14,15 16 (17) Name VD1 VD2 n.c. VD3 / RFout n.c. Configuration Drain voltage 1st stage Drain voltage 2nd stage Drain 3rd stage and RF-output - Vcontrol Control voltage for power ramping n.c. Vneg Gnd1 RFin GND2 negative voltage for current control circuit Ground pin 1st stage RF Input Ground (backside of MW16 package) Siemens Aktiengesellschaft Semiconductor Group 2 2 23.07....