SILICON CONTROLLED RECTIFIERS
2N6400-2N6405
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Availabl...
Description
2N6400-2N6405
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage (1) (TJ = -40 to 125°C, sine wave 50 to 60Hz, gate open) 2N6400 2N6401 2N6402 2N6403 2N6404 2N6405
VDRM VRRM
50 100 200 400 600 800
Volts
On-state RMS current (180° conduction angles), TC = 100°C)
IT(RMS) 16 Amps
Average on-state current (180° conduction angles, TC = 100°C)
IT(AV)
Amps 10
Peak non-repetitive surge current (1/2 cycle, sine wave 60Hz, TJ = 90°C)
Circuit fusing (t = 8.3ms)
ITSM
Amps 160
I2t
145
A2s
Forward peak gate power (pulse width ≤ 1.0µs, TC = 100°C)
Forward average gate power (t = 8.3ms, TC = 100°C)
PGM PG(AV)
Watts 20
Watts 0.5
Forward peak gate current (Pulse width ≤ 1.0µs, TC = 100°C)
IGM
Amps 2.0
Operating junction temperature range
TJ -40 to 125 °C
Storage temperature range
Tstg -40 to 150
°C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage, however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic Thermal resistance, junction to case Maximum lead te...
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