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TIP42BG Dataheets PDF



Part Number TIP42BG
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Complementary Silicon Plastic Power Transistors
Datasheet TIP42BG DatasheetTIP42BG Datasheet (PDF)

TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG, TIP42CG (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features • Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage TIP41G, TIP42G TIP41AG, TIP42AG TIP41BG, TIP42BG TIP41CG, TIP42CG VCEO 40 60 80 100 Vdc Collector−Base Voltage TIP41G, TI.

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TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG, TIP42CG (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features • Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage TIP41G, TIP42G TIP41AG, TIP42AG TIP41BG, TIP42BG TIP41CG, TIP42CG VCEO 40 60 80 100 Vdc Collector−Base Voltage TIP41G, TIP42G TIP41AG, TIP42AG TIP41BG, TIP42BG TIP41CG, TIP42CG VCB Vdc 40 60 80 100 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C VEB 5.0 Vdc IC 6.0 Adc ICM 10 Adc IB 2.0 Adc PD 65 W 0.52 W/°C Total Power Dissipation @ TA = 25°C Derate above 25°C PD 2.0 W 0.016 W/°C Unclamped Inductive Load Energy (Note 1) E 62.5 mJ Operating and Storage Junction, Temperature Range TJ, Tstg – 65 to +150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 October, 2014 − Rev. 11 1 www.onsemi.com 6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40−60−80−100 VOLTS, 65 WATTS PNP COLLECTOR 2,4 NPN COLLECTOR 2,4 1 BASE 1 BASE 3 EMITTER 3 EMITTER 4 12 3 TO−220 CASE 221A STYLE 1 MARKING DIAGRAM TIP4xxG AYWW TIP4xx xx A Y WW G = Device Code = 1, 1A, 1B, 1C 2, 2A, 2B, 2C = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Publication Order Number: TIP41A/D TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG, TIP42CG (PNP) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Symbol RqJC RqJA Max 1.67 57 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) TIP41G, TIP42G TIP41AG, TIP42AG TIP41BG, TIP42BG TIP41CG, TIP42CG VCEO(sus) Vdc 40 − 60 − 80 − 100 − Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP41G, TIP41AG, TIP42G, TIP42AG (VCE = 60 Vdc, IB = 0) TIP41BG, TIP41CG, TIP42BG, TIP42CG ICEO − − mAdc 0.7 0.7 Collector Cutoff Current (VCE = 40 Vdc, VEB = 0) TIP41G, TIP42G (VCE = 60 Vdc, VEB = 0) TIP41AG, TIP42AG (VCE = 80 Vdc, VEB = 0) TIP41BG, TIP42BG (VCE = 100 Vdc, VEB = 0) TIP41CG, TIP42CG ICES mAdc − 400 − 400 − 400 − 400 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 2) IEBO − 1.0 mAdc DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) Collector−Emitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc) Base−Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc) DYNAMIC CHARACTERISTICS hFE VCE(sat) VBE(on) 30 15 − − − − 75 Vdc 1.5 Vdc 2.0 Current−Gain − Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 MHz − Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 − − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG, TIP42CG (PNP) TA TC 4.0 80 PD, POWER DISSIPATION (WATTS) 3.0 60 2.0 40 1.0 20 TC TA 00 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (°C) Figure 1. Power Derating VCC + 30 V +11 V 0 - 9.0 V 25 ms tr, tf ≤ 10 ns DUTY CYCLE = 1.0% RC SCOPE RB D1 - 4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.:   1N5825 USED ABOVE IB ≈ 100 mA   MSD6100 USED BELOW IB ≈ 100 mA Figure 2. Switching Time Test Circuit t, TIME (  μs) 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.06 0.1 TJ = 25°C VCC = 30 V IC/IB = 10 tr td @ VBE(off) ≈ 5.0 V 0.2 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn−On Time 4.0 6.0 www.onsemi.com 3 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG, TIP42CG (PNP) 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 1.0 0.2 ZqJC(t) = r(t) RqJC RqJC = 1.92°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN .


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