N-CHANNEL MOSFET
6N60 Power Mosfet
6.2 Amps, 600/650 Volts
N-CHANNEL MOSFET
DESCRIPTION
The 6N60 is a high voltage MOSFET and is designe...
Description
6N60 Power Mosfet
6.2 Amps, 600/650 Volts
N-CHANNEL MOSFET
DESCRIPTION
The 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
FEATURES
* RDS(ON) = 1.5Ω @VGS = 10V * Ultra low gate charge (typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 10pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
SYMBOL
*Pb-free plating product number: 6N60L
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
6N60-x-TA3-T
6N60L-x-TA3-T
Package TO-220
Pin Assignment 12 GD
3 S
Packing Tube
www.artschip.com
1
6N60 Power Mosfet
ABSOLUTE MAXIMUM RATINGS (TC = 25 , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
6N60-A 6N60-B
VDSS
600 650
Gate-Source Voltage
VGSS
±30
Avalanche Current (Note 1) Continuous Drain Current
TC = 25°C
IAR 6.2 ID 6.2
TC = 100°C
3.9
Pulsed Drain Current (Note 1) Avalanche Energy
Single Pulsed (Note 2)
IDM EAS
24.8 440
Repetitive (Note 1)
EAR
13
Power Dissipation Junction Temperature
PD 62.5 TJ +150
Operating Temperature
TOPR
-55 ~ +150
Storage Temperature
TSTG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
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