CHA2066

CHA2066 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. A B C D E NC G1 7272 NC G2 Vd RFin RFout UMS Main Features Gain ( dB ) 20 18 16 14 12 10 8 6 4 2 0 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Frequency ( GHz ) 5 Noise Figure ( dB ) ■ Broad band performance 10-16GHz ■ 2.0dB noise figure, 10-16GHz ■ 16dB gain, ± 0.5dB gain flatness ■ Low DC power consumption, 50mA ■ 20dBm 3rd order intercept point ■ Chip size : 1,52 x 1,08 x 0.1mm 4 3 2 1 0 On wafer typical measurements. Main Characteristics Tamb = +25°C Symbol NF G ∆G Parameter Noise figure, 10-16GHz Gain Gain flatness 14 Min Typ 2.0 16 ± 0.5 ± 1.0 Max 2.5 Unit dB dB dB ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref. : DSCHA20661257 -14-Sept-01 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2066 Electrical Characteristics Tamb = +25°C, Vd = +4V Symbol Parameter 10-16GHz Low Noise Amplifier Test Condi tions Min Typ Max Unit Fop G ∆G NF VSWRin VSWRout IP3 P1dB Id Operating frequency range Gain (1) Gain flatness (1) ...