N-CHANNEL MOSFET
N R N-CHANNEL MOSFET
HM5N60
MAIN CHARACTERISTICS
Package
ID .0 A VDSS 600 V Rdson(@Vgs=10V) 2.4Ω Qg 13.3nC
z z ...
Description
N R N-CHANNEL MOSFET
HM5N60
MAIN CHARACTERISTICS
Package
ID .0 A VDSS 600 V Rdson(@Vgs=10V) 2.4Ω Qg 13.3nC
z z z UPS
APPLICATIONS z High efficiency switch
mode power supplies z Electronic lamp ballasts
based on half bridge z UPS
z z Crss ( 9pF) z z z dv/dt zRoHS
FEATURES zLow gate charge zLow Crss (typical 9pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
ORDER MESSAGE
Order codes Marking Package
HMN60I HMN60I IPAK
HM N60K HMN60K DPAK
HMN60
HMN60 TO-220C
HM N60F HMN60F TO-220MF
Halogen Free
NO NO NO NO
Packaging
Tube Tube Tube Tube
Device Weight
0.35 g(typ) 0.30 g(typ) 2.15 g(typ) 2.20 g(typ)
:201007A
Shenzhen H&M Semiconductor Co.Ltd http://www.hmsemi.com
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R
ABSOLUTE RATINGS (Tc=25℃)
HM5N60
Parameter
Symbol
HM5N60I/K
Value
HM5N60
HM5N60F
- Drain-Source Voltage
VDSS
Drain Current -continuous
ID T=25℃ T=100℃
( 1)
Drain Current - pulse (note 1)
IDM
Gate-Source Voltage
VGSS
( 2)
Single Pulsed Avalanche Energy
EAS
note 2)
( 1)
Avalanche Current (note 1)
IAR
( 1)
Repetitive Avalanche Current (note 1)
EAR
( 3) Peak Diode Recovery
dv/dt
dv/dt (note 3)
Power Dissipation
PD TC=25℃ -Derate above
51 0.39
25℃
Operating and Storage Temperature Range
TJ,TSTG
Maximum Lead Temperature for Soldering Purposes
TL
*
*Drain current limited by maximum junction temperature
600 5.0 2.5 16
±30 240
5.0 10.0
5.5 100 0.80
-55~+150 300
5.0* 2.5* 16*
33 0.26
Uni t V A A
...
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