2N6660

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω Fast Switching Low Threshold Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain – Source Voltage 60V VGS Gate – Source Voltage ±20V ID Continuous Drain Current TC = 25°C 1.0A IDM Pulsed Drain Current (1) 3.0A PD Total Power Dissipation at TC ≤ 25°C 5W De-rate TC > 25°C 40mW/°C PD Total Power Dissipation at TA ≤ 25°C 725mW De-rate TA > 25°C 5.8mW/°C TJ Operating Temperature Range -65 to +150°C Tstg Storage Temperature Range -65 to +150°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case RθJA Thermal Resistance, Junction To Ambient Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width ≤ 300us, δ ≤ 2% Min. Typ. Max. Units 25 °C/W 172 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telep...