2N6661

2N6661 N-Channel, Enhancement-Mode, Vertical DMOS FET Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc. Description 2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where verylow threshold voltage, high breakdown voltage, highinput impedance, low-input capacitance, and fast switching speeds are desired. Package Types GATE SOURCE DRAIN TO-39 Case: Drain See Table 2-1 for pin information  2016 Microchip Technology Inc. DS20005516A-page 1 2N6661 1.0 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS† Drain-to-source voltage .......................................................................................................