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CHA2157

United Monolithic Semiconductors

55-60GHz Low Noise / Medium Power Amplifier

CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA215...


United Monolithic Semiconductors

CHA2157

File Download Download CHA2157 Datasheet


Description
CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA2157 is a two stage low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ 3.5 dB noise figure ■ 10 dB ± 1dB gain ■ 15 dBm output power @ -1dB gain comp. ■ DC power consumption, 80mA @ 3.3V ■ Chip size: 1.71 x 1.04 x 0.10 mm Gain & Rloss (dB) 15 10 5 0 -5 -10 -15 -20 55 Gain S11 56 57 58 Frequency (GHz) S22 59 Typical on Wafer Measurements 60 Main Characteristics Tamb. = 25°C Symbol Parameter Fop Operating frequency range G Small signal gain NF Noise figure P1dB Output power at...




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