36-40GHz Low Noise Very High Gain Amplifier
CHA2395
RoHS COMPLIANT
36-40GHz Low Noise Very High Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA239...
Description
CHA2395
RoHS COMPLIANT
36-40GHz Low Noise Very High Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
In
Vd Vd
Out
Vg 1,2
Vg 3,4
Gain (dB) NF (dB)
Main Features
■ Broadband performances ■ 3.0dB Noise Figure ■ 30dB gain ■ ±1.0dB gain flatness ■ Low DC power consumption, 90mA@3.5V ■ Chip size: 2.07 X 1.11 X 0.10 mm
Main Characteristics
Tamb. = 25°C
Typical on wafer measurements
35 6 30 5 25 4 20 3 15 2 10 1
50 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz)
Symbol
Parameter
Fop Operating frequency range
G Small signal gain
P1dB Output power at 1dB gain compression
NF Noise figure
Min Typ Max Unit
36 40 GHz
25 30
...
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