isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V(Min.) ·Low Collec...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V(Min.) ·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@IC= 5A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage, fast switching industrial
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
20
A
IB
Base Current
4
A
IBM
Base Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
6
A
125
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W
BUW12AW
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 5A; IB= 1A
VCE=VCES ;VBE= 0 VCE=VCES ;VBE= 0;TC=125℃
VEB= 9V; IC= 0
hFE-1
DC Current Gain
IC= 10mA; VCE= 5V
hFE-2
DC Current Gain
IC= 1A; VCE= 5V
B...