BUW46

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Intended in fast switching applications for high output powers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous PT Total Power Dissipation @ TC≤25℃ TJ Junction Temperature 10 A 175 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W BUW46 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 1A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 10A; IB= 2A VBE(sat)-2 Base-Emitter Saturation Voltage IC= 7A; IB= 1A IEBO Emitter cut-off current ICBO Collector Cutoff Current hFE DC Current Gain VEB=7V; IC=0 VCB= 900V; IE= 0 VCB= 900V; IE= 0; Tc= 125℃ IC= 1A; VCE= 5V BUW...